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SAMSUNG 1TB 990 EVO Plus Gen4 NVMeᵀᴹ Solid State Drive
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SAMSUNG 1TB 990 EVO Plus Gen4 NVMeᵀᴹ Solid State Drive

SAMSUNG 1TB 990 EVO Plus Gen4 NVMeᵀᴹ Solid State Drive

SPECIFICATION

Part Number

(MZ-V9S1T0BW)

General Features

Capacity

1TB

Interface

PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0

Form Factor

M.2 (2280)

Performance

Sequential Read/Write (MB/s)

7,150 / 6,300

Random Read/Write (IOPS, QD32)

850K / 1,350K

Power

Active (Read/Write)

4.3W / 4.2W

Device Sleep (L1.2)

Typical 60mW / Typical 5mW

Data Encryption

Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)

Endurance

Total Bytes Written (TBW)

600

Hardware

NAND

Samsung V NAND TLC (V8)

Controller

In-House Controller

Cache Memory

HMB (Host Memory Buffer)

Dimensions (W x H x D)

Product

0.9 x 0.1 x 3.2 in.

Package Size

3.9 x 0.9 x 5.6 in.

Inner Box Size

7.2 x 5.4 x 9.4 in.

Master Box Size

37.0 x 10.4 x 18.0 in.

 

$162.19
SAMSUNG 1TB 990 EVO Plus Gen4 NVMeᵀᴹ Solid State Drive
$162.19

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SAMSUNG 1TB 990 EVO Plus Gen4 NVMeᵀᴹ Solid State Drive - Image 4

SAMSUNG 1TB 990 EVO Plus Gen4 NVMeᵀᴹ Solid State Drive

SPECIFICATION

Part Number

(MZ-V9S1T0BW)

General Features

Capacity

1TB

Interface

PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0

Form Factor

M.2 (2280)

Performance

Sequential Read/Write (MB/s)

7,150 / 6,300

Random Read/Write (IOPS, QD32)

850K / 1,350K

Power

Active (Read/Write)

4.3W / 4.2W

Device Sleep (L1.2)

Typical 60mW / Typical 5mW

Data Encryption

Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)

Endurance

Total Bytes Written (TBW)

600

Hardware

NAND

Samsung V NAND TLC (V8)

Controller

In-House Controller

Cache Memory

HMB (Host Memory Buffer)

Dimensions (W x H x D)

Product

0.9 x 0.1 x 3.2 in.

Package Size

3.9 x 0.9 x 5.6 in.

Inner Box Size

7.2 x 5.4 x 9.4 in.

Master Box Size

37.0 x 10.4 x 18.0 in.

 

Product Information

Shipping & Returns

Description

SPECIFICATION

Part Number

(MZ-V9S1T0BW)

General Features

Capacity

1TB

Interface

PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0

Form Factor

M.2 (2280)

Performance

Sequential Read/Write (MB/s)

7,150 / 6,300

Random Read/Write (IOPS, QD32)

850K / 1,350K

Power

Active (Read/Write)

4.3W / 4.2W

Device Sleep (L1.2)

Typical 60mW / Typical 5mW

Data Encryption

Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)

Endurance

Total Bytes Written (TBW)

600

Hardware

NAND

Samsung V NAND TLC (V8)

Controller

In-House Controller

Cache Memory

HMB (Host Memory Buffer)

Dimensions (W x H x D)

Product

0.9 x 0.1 x 3.2 in.

Package Size

3.9 x 0.9 x 5.6 in.

Inner Box Size

7.2 x 5.4 x 9.4 in.

Master Box Size

37.0 x 10.4 x 18.0 in.

 

SAMSUNG 1TB 990 EVO Plus Gen4 NVMeᵀᴹ Solid State Drive | PC Express