
LEXAR 1TB NM620 M.2 2280 PCIe Gen3X4 (LNM620X001T-RNNNG) Solid State Drive

SPECIFICATION
|
Form Factor |
M.2 2280 |
|
Interface |
PCIe Gen3x4 |
|
Performance (256GB) |
Sequential Read: up to 3500 MB/s; Write: up to 1300 MB/s; IOPS: up to 92K / 240K |
|
Performance (512GB) |
Sequential Read: up to 3500 MB/s; Write: up to 2400 MB/s; IOPS: up to 200K / 256K |
|
Performance (1TB) |
Sequential Read: up to 3500 MB/s; Write: up to 3000 MB/s; IOPS: up to 200K / 256K |
|
Performance (2TB) |
Sequential Read: up to 3500 MB/s; Write: up to 3000 MB/s; IOPS: up to 300K / 256K |
|
Operating Temperature |
0°C to 70°C (32°F to 158°F) |
|
Storage Temperature |
-40°C to 85°C (-40°F to 185°F) |
|
Dimensions (L × W × H) |
80 mm × 22 mm × 2.25 mm / 3.15” × 0.87” × 0.09” |
|
Weight |
9 g |
|
Shock Resistance |
1500 G, 0.5 ms duration, Half Sine Wave |
|
Vibration Resistance |
10–2000 Hz, 1.5 mm, 20 G, 1 Oct/min, 30 min/axis (X, Y, Z) |
|
TBW (Total Bytes Written) |
2TB: 1000 TB; 1TB: 500 TB; 512GB: 250 TB; 256GB: 125 TB |
|
DWPD (Drive Writes Per Day) |
1TB: 0.44; 512GB: 0.44; 256GB: 0.44 |
|
NAND Flash |
3D TLC |
|
MTBF |
1,500,000 hours |
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LEXAR 1TB NM620 M.2 2280 PCIe Gen3X4 (LNM620X001T-RNNNG) Solid State Drive

SPECIFICATION
|
Form Factor |
M.2 2280 |
|
Interface |
PCIe Gen3x4 |
|
Performance (256GB) |
Sequential Read: up to 3500 MB/s; Write: up to 1300 MB/s; IOPS: up to 92K / 240K |
|
Performance (512GB) |
Sequential Read: up to 3500 MB/s; Write: up to 2400 MB/s; IOPS: up to 200K / 256K |
|
Performance (1TB) |
Sequential Read: up to 3500 MB/s; Write: up to 3000 MB/s; IOPS: up to 200K / 256K |
|
Performance (2TB) |
Sequential Read: up to 3500 MB/s; Write: up to 3000 MB/s; IOPS: up to 300K / 256K |
|
Operating Temperature |
0°C to 70°C (32°F to 158°F) |
|
Storage Temperature |
-40°C to 85°C (-40°F to 185°F) |
|
Dimensions (L × W × H) |
80 mm × 22 mm × 2.25 mm / 3.15” × 0.87” × 0.09” |
|
Weight |
9 g |
|
Shock Resistance |
1500 G, 0.5 ms duration, Half Sine Wave |
|
Vibration Resistance |
10–2000 Hz, 1.5 mm, 20 G, 1 Oct/min, 30 min/axis (X, Y, Z) |
|
TBW (Total Bytes Written) |
2TB: 1000 TB; 1TB: 500 TB; 512GB: 250 TB; 256GB: 125 TB |
|
DWPD (Drive Writes Per Day) |
1TB: 0.44; 512GB: 0.44; 256GB: 0.44 |
|
NAND Flash |
3D TLC |
|
MTBF |
1,500,000 hours |
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Description

SPECIFICATION
|
Form Factor |
M.2 2280 |
|
Interface |
PCIe Gen3x4 |
|
Performance (256GB) |
Sequential Read: up to 3500 MB/s; Write: up to 1300 MB/s; IOPS: up to 92K / 240K |
|
Performance (512GB) |
Sequential Read: up to 3500 MB/s; Write: up to 2400 MB/s; IOPS: up to 200K / 256K |
|
Performance (1TB) |
Sequential Read: up to 3500 MB/s; Write: up to 3000 MB/s; IOPS: up to 200K / 256K |
|
Performance (2TB) |
Sequential Read: up to 3500 MB/s; Write: up to 3000 MB/s; IOPS: up to 300K / 256K |
|
Operating Temperature |
0°C to 70°C (32°F to 158°F) |
|
Storage Temperature |
-40°C to 85°C (-40°F to 185°F) |
|
Dimensions (L × W × H) |
80 mm × 22 mm × 2.25 mm / 3.15” × 0.87” × 0.09” |
|
Weight |
9 g |
|
Shock Resistance |
1500 G, 0.5 ms duration, Half Sine Wave |
|
Vibration Resistance |
10–2000 Hz, 1.5 mm, 20 G, 1 Oct/min, 30 min/axis (X, Y, Z) |
|
TBW (Total Bytes Written) |
2TB: 1000 TB; 1TB: 500 TB; 512GB: 250 TB; 256GB: 125 TB |
|
DWPD (Drive Writes Per Day) |
1TB: 0.44; 512GB: 0.44; 256GB: 0.44 |
|
NAND Flash |
3D TLC |
|
MTBF |
1,500,000 hours |




















